Srabanti full biography of bill

Guest Editor

1. S. Chowdhury, T.Palacios, G.Xing, Topical section in physica status solidi a Compound Semiconductors pss (a) – applications and materials science, 2018
2. A. Doolittle, T. Palacios, S. Keller, S. Rajan, D. Feezell, J. Wierer, S. Chowdhury, and S.-C. Shen, “Nitride Semiconductors,” Status Solidi Basic Res., vol. 254, no. 8, 2017

Book Chapters and Newsletter

1. Gallium Nitride enabled High Frequency and High Efficiency Power Conversion Springer [to be published by the end of 2018] Edited by: M. Meneghini, G. Meneghesso, E. Zanoni
2. Handbook of GaN Semiconductor Materials and Devices. Boca Raton: CRC Press, 2018 Chapter 10: Power Conversion and the Role of GaN- Srabanti Chowdhury [link] Edited By: Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen
3. Power GaN Devices: materials applications and reliability, Springer, 2016 Chapter 5: Vertical Gallium Nitride Technology, Srabanti Chowdhury Pages 101-121 [link] Edited by M. Meneghini, G. Meneghesso, E. Zanoni
4. GaN Electronics for Next Generation Cars, Srabanti Chowdhury, IEEE Transportation, Electrification Community, November/December 2014 [Newsletter]

Journal Papers

1. D. Ji, Wenwen Li, and Srabanti Chowdhury, “A Study on the Impact of Channel Mobility on Switching Perfo

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   JI, Dong

   Ph.D. (University of California Davis)    

   B.S. (Beijing Jiao Tong University)          

   Wide bandgap semiconductors, power devices, optoelectronics

   Physics, Materials, Electrical Engineering, New Energy Science and Engineering

   dongji829@outlook.com

   Dong Ji received his Ph.D. in ECE from the University of California Davis in 2017, B.S. from Beijing Jiao Tong University in 2013. Before he joined Intel Corp in 2019, he was a postdoctoral scholar in Stanford EE. Dr. Ji’s research work focuses on next generation devices based on wide bandgap semiconductors. Dr. Ji has published over 50 research/review/conference articles.

   1. Dong Ji, and Srabanti Chowdhury, Wide Bandgap Semiconductor Electronics and Devices, Chapter 10, "On the progress made in GaN vertical device technology", World Scientific Publishing, 2019. ISSN: 1793-1274.
   2. Srabanti Chowdhury and Dong Ji, Gallium Nitride-Enabled High Frequency and High Efficiency Power Conversion, Chapter 3, "Vertical GaN Transistors for Power Electronics" Springer International Publishing, 05/2018. ISSN: 1558-9412.
   3. Srabanti Chowdhury and Dong Ji, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices, Chapter 5, "Vertical GaN Devices", Wiley, 12/2019. ISBN: 978-3-527
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